Advanced Characterization Systems for Indium Gallium Arsenide Development

Spatially Resolving Bandgap Variations and Localized Defects in Alloy Structures

InGaAs is a cornerstone material in near-infrared photonics and high-efficiency multijunction photovoltaic solar cells valued for its tunable bandgap, high electron mobility, and spectral sensitivity across the NIR range. However, its compositional flexibility is also its greatest challenge since subtle variations in alloy stoichiometry and localized defects can degrade device performance in ways conventional tools struggle to resolve.

Photon’s Laser Line Tunable Filter (LLTF) delivers industry-leading out-of-band rejection, making it the tool of choice for bandgap determination and spectral responsivity calibration of novel InGaAs compositions with subtle or overlapping spectral features. For device-level characterization, our IMA and GrandEOS hyperspectral imaging systems provide advanced photoluminescence mapping techniques like QFLS, PLQY, and Eg mapping to spatially resolve alloy composition gradients and defect-driven recombination sites. With an outstanding diffraction-limited resolution and staring-mode area imaging, they set the standard for high-precision InGaAs research.